Study of the Initial Nucleation and Growth of Catalyst-free InAs and Ge Nanowires
Abstract
The authors have examined the nucleation conditions in the growth of catalyst-free InAs and Ge nanowires (NWs) on porous Si, as well as the growth of InAs NWs on a SiO2 substrate using 10 nm sized In nanoparticles. The NW growths were performed in a closed system. The results suggest that all the NWs grew from a solid nucleation state. For the growth using In nanoparticles, the results suggest that the growth mechanism is very different from the vapor-liquid-solid, in that the nanowire growth only begins after the nucleation particle solidifies.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2007
- Accession Number
- ADA574015
Entities
People
- Hyun D. Park
- Sharka M. Prokes
Organizations
- United States Naval Research Laboratory