Mobility Enhancement in Strained p-InGaSb Quantum Wells

Abstract

Quantum wells of InGaSb clad by AlGaSb were grown by molecular beam epitaxy. The InGaSb is in compressive strain, resulting in a splitting of the heavy- and light-hole valence bands and an enhancement of the mobility. The mobility was found to increase with increasing InSb mole fraction for values of strain up to 2%. Room-temperature mobilities as high as 1500 cm2 /V s were reached for 7.5 nm channels of In0.40Ga0.60Sb. These results are an important step toward the goal of high-performance p-channel field-effect transistors for complementary circuits operating at extremely low power.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2007
Accession Number
ADA574021

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Mario G. Ancona
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Crystal Lattices
  • Diffraction
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • High Resolution
  • Mobility
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Valence Bands
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing