Antimonide-Based Compound Semiconductors for Electronic Devices: A Review

Abstract

Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrowbandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2005
Accession Number
ADA574089

Entities

People

  • Brian R. Bennett
  • Mario G. Ancona
  • Richard Magno
  • Ronaldd D. Schrimpf
  • Walter Kruppa

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Logic Gates
  • Modules (Electronics)
  • Power Electronics
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Semiconductors
  • Solid State Electronics
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Economics
  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics