InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor

Abstract

An npn double heterojunction bipolar transistor has been made using In0.27Ga0.73Sb for the base and two different InxAl1-xAsySb1-y alloys for the emitter and collector. It has a common emitter current gain of 25. The emitter-base voltages required for a given collector current are smaller than those of InP-based HBTs.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2005
Accession Number
ADA574099

Entities

People

  • B. P. Tinkham
  • Brian R. Bennett
  • Doewon Park
  • Evan R. Glaser
  • Karl D. Hobart
  • Mario G. Ancona
  • N. A. Papanicolaou
  • P. M. Campbell
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Bipolar Junction Transistors
  • Conduction Bands
  • Current Density
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Frequency
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Metal-Semiconductor Junctions
  • Military Research
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology