InAs HEMT Narrowband Amplifier with Ultra-low Power Dissipation

Abstract

The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4% in S-band and dissipates a total power of only 365 mW.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2006
Accession Number
ADA574122

Entities

People

  • Brian R. Bennett
  • Doewon Park
  • N. A. Papanicolaou
  • R. Bass
  • Ronaldd D. Schrimpf
  • W. Kruppa

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Circuit Boards
  • Compression
  • Dissipation
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Fabrication
  • Frequency
  • High Electron Mobility Transistors
  • Metal Plates
  • Military Research
  • Mobility
  • Narrowband
  • Semiconductors
  • Transistors

Readers

  • Electrical Engineering
  • Microwave Engineering.
  • Semiconductor Device Technology