Demonstration of the First 9.2 kV 4H-SiC Bipolar Junction Transistor

Abstract

This paper reports the first demonstration of a 9.2kV 4H-SiC bipolar junction transistor (BJT) based on a 50 micrometer, 7x10(14)cm-3 doped drift layer, achieving an emitter current density of 150A/cm2 at VCEO=5V. A much larger area BJT of identical wafer design with negligible current spreading effect would have an RSP_ON equal to 49mOmega-cm2 limited only by the specific resistance of the 50micrometer drift layer. A DC common emitter current gain of 7 is achieved.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2004
Accession Number
ADA574328

Entities

People

  • J. H. Zhao
  • Jinlun Zhang
  • P. Alexandrov
  • T. Burke

Organizations

  • Rutgers School of Engineering

Tags

DTIC Thesaurus Topics

  • Annealing
  • Bipolar Junction Transistors
  • Ceramic Materials
  • Compound Semiconductors
  • Current Density
  • Demonstrations
  • High Temperature
  • High Voltage
  • Ion Implantation
  • Melting Point
  • Metal-Semiconductor Junctions
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.
  • Superconducting Magnet Technology