Fabrication Development for Nanowire GHz-Counting-Rate Single-Photon Detectors
Abstract
We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2005
- Accession Number
- ADA574649
Entities
People
- Aaron B. Pearlman
- Aleksandr Verevkin
- Antonin Ferri
- Boris Voronov
- Eric Dauler
- Gregory Gol'tsman
- Joel K. Yang
- Karl K Berggren
- Roman Sobolewski
- William E. Keicher
Organizations
- Massachusetts Institute of Technology