Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

Abstract

We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML) quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p (s/p) polarized spectral response ratio of this device is measured to be 21.7%, which is significantly higher than conventional Stranski-Krastanov quantum dots (~13%) and quantum wells (~2.8%). This result makes the SML-QDIP an attractive candidate in applications that require normal incidence.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2013
Accession Number
ADA574857

Entities

People

  • A. V. Barve
  • J. O. Kim
  • Jeffery Allen
  • Monica Allen
  • S. Adhikary
  • S. Chakrabari
  • S. K. Noh
  • Stephanie J. Lee
  • Surojeet Sengupta
  • Y. D. Sharma

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Crystals
  • Detectors
  • Electronics Laboratories
  • Energy Levels
  • Focal Plane Arrays
  • Focal Planes
  • Ground State
  • Heterojunctions
  • Materials
  • Monomolecular Films
  • Photodetectors
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing