Parametric Ultra-High Bandwidth Silicon-Based Devices and Systems
Abstract
During this project, we found that two-photon and free-carrier absorption are primary facilitators of crosstalk in silicon nanowaveguides. We experimentally demonstrated four-wave-mixing-based continuous wavelength conversion of optical differential-phase-shift-keyed signals with large wavelength conversion ranges and simultaneous wavelength conversion of dual-wavelength channels with mixed modulation formats in 1.1-cm-long dispersion-engineered silicon waveguides. We demonstrated broadband continuous wavelength conversion based on four-wave mixing in silicon waveguides, operating with data rates to 40Gb/s, validating signal integrity using bit-error-rate measurements. We demonstrated a scalable, energy-efficient, and pragmatic method for high-bandwidth wavelength multicasting using FWM in silicon photonic nanowires. We demonstrated reduction of the free-carrier lifetime in a silicon nanowaveguide from 3ns to 12.2ps by applying a reverse bias across an integrated p-i-n diode. We demonstrated ultrabroad-bandwidth low-power frequency conversion of continuous-wave light in a dispersion engineered silicon nanowaveguide via four-wave mixing. We demonstrated all-optical continuously tunable delay line based on parametric mixing with a total delay range of 7.34us. We demonstrated a monolithically integrated CMOS-compatible source using an optical parametric oscillator based on a silicon nitride ring resonator on silicon. Lastly, we demonstrated continuously tunable optical delays as large as 1.1us range for 10Gb/s NRZ optical signals based on four-wave mixing process in silicon waveguide.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 25, 2012
- Accession Number
- ADA575290
Entities
People
- Alexander L. Gaeta
Organizations
- Cornell University