IR Detectors Technology

Abstract

This report results from a contract tasking Charles University as follows: The contractor will prepare Near perfect (CdZn)Te crystals of diameter up to 10 cm under a defined Cd overpressure. Modeling of the crystal growth process will be performed to optimize conditions for the growth of perfect crystals. The objective is to produce near-perfect (CdZn)Te substrates in orientations (111) and (211) for LPE/MBE epitaxial growth applications. Point defects will be studied by galvanomagnetic and optical measurements. The aim of the experiments is to find out, how the composition of the melt close to the melting point and the way of cooling down the crystal after solidification influences its optical and electrical properties and concentration of precipitates.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2000
Accession Number
ADA575774

Entities

People

  • Pavel Hoschl

Organizations

  • Charles University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Boltzmann Equation
  • Crystal Growth
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystals
  • Detectors
  • Electrical Conductivity
  • Electrical Properties
  • Electron Mobility
  • Energy Bands
  • Fermi Levels
  • Measurement
  • Melting Point
  • Phase Diagrams
  • Phase Transformations
  • Point Defects

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.