Radiation Effects in 3D Integrated SOl SRAM Circuits

Abstract

Radiation effects are presented for the first time for vertically integrated 3x64-kb SOl SRAM circuits fabricated using Lincoln 3DIC technology. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fabrication techniques including thin-film planarization, layer alignment and oxide bonding. Micronscale dense 3D vias are fabricated to interconnect circuits between tiers. lonizing dose and single event effects are discussed for proton irradiation with energies between 4.8 and 500 MeV. Results are compared with 14-MeV neutron irradiation. Single event upset cross-section, tier-to-tier and angular effects are discussed. The interaction of 500-MeV protons with tungsten interconnects is investigated using Monte-Carlo simulations. Results show no tier to tier effects and comparable radiation effects on 2D and 3D SRAM. 3DIC technology is a potential candidate for fabricating circuits for space applications.

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Document Details

Document Type
Technical Report
Publication Date
Aug 23, 2011
Accession Number
ADA576298

Entities

People

  • Brian Tyrrell
  • Chenson Chen
  • Ewart W. Blackmore
  • James R. Schwank
  • Marty R. Shaneyfelt
  • Pascale M. Gouker
  • Peter Wyatt
  • Richard D'onofrio
  • Tony Soares
  • Weilin Hu

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Complementary Metal-Oxide Semiconductors
  • Electronics Laboratories
  • Experimental Data
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Ionizing Radiation
  • Materials
  • Monte Carlo Method
  • Ocean Observing Systems
  • Proton Beams
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Standards
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Space