Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT)

Abstract

A quantum-design approach to reduce the Auger losses in wavelength=2-micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6X lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7X and represents about a 19-fold reduction in the equivalent ?Auger coefficient.?

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2013
Accession Number
ADA577489

Entities

People

  • David Tomich
  • Gregory Triplett
  • Jerome V. Moloney
  • Joerg Hader
  • Robert Bedford
  • Stephan W. Koch

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Coefficients
  • Conduction Bands
  • Detectors
  • Energy Bands
  • Equations
  • Lasers
  • Materials
  • Quantum Well Lasers
  • Quantum Wells
  • Scattering
  • Semiconductor Lasers
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing