Electronic Tuning of La(2/3)Sr(1/3)MnO(3) Thin Films via Heteroepitaxy

Abstract

Epitaxial La2/3Sr1/3MnO3 films grown on LaAlO3 substrates of various orientations exhibit a range of magnetoresistive properties, demonstrating the utility of strain as an electronic tuning parameter for manganites. Large magnetoresistance over a broad range of temperatures highest (-64% at 50 kOe) at the lowest temperatures measured is observed in a coherently strained La2/3Sr1/3MnO3 film on a (001) LaAlO3 substrate. In addition to higher magnetoresistance, its reduced magnetization and conductance suggest the stabilization of a more insulating ground state and the possibility of strain-induced phase coexistence. Similar field-dependent magnetotransport features at low temperatures, distinct from those exhibited by bulk manganites, are also seen in a partially strained film on a (110) LaAlO3 substrate, but bulk-like magnetoresistive behavior is observed in a relaxed La2/3Sr1/3MnO3 film on a (111) LaAlO3 substrate.

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Document Details

Document Type
Technical Report
Publication Date
Mar 29, 2012
Accession Number
ADA578143

Entities

People

  • Franklin J. Wong
  • Jodi M. Iwata-harms
  • Shaobo Zhu
  • Yuri Suzuki

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bulk Materials
  • Crystallography
  • Diffraction
  • Distortion
  • Electrical Properties
  • Films
  • Ground State
  • Low Temperature
  • Magnetic Fields
  • Magnetic Moments
  • Magnetic Properties
  • Materials
  • Materials Science
  • Measurement
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene