Physical Modeling and Reliability Mechanisms in High Voltage AIGaN/GaN HFETs

Abstract

The effect of LO phonon lifetime in GaN on the carrier velocity and heterojunction field effect transistor speed and stability has been established. The observed dependence of the LO phonon lifetime on the bulk carrier density has been phenomenologically ascribed to LO phonon-Plasmon interaction with the resonance giving rise to the shortest lifetime and best performance. Specifically, the electron velocity is the highest, as determined by an extraction method using the current gain cut off frequency data in FETs, the stability is the best in charge pumping experiments, the defect generation in the least as probed by low frequency noise measurements. In aggregate, the cumulative data clearly point to the benefits of operation at or near resonance of LO phonon frequency and Plasmon frequency.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2013
Accession Number
ADA578210

Entities

People

  • Hadis H. Morkoç̌

Organizations

  • Virginia Commonwealth University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electron Density
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Spin-Orbit Interaction
  • Three Dimensional
  • Two Dimensional

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics