Photocarrier Lifetime and Transport in Silicon Supersaturated with Sulfur
Abstract
Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10 8 cm2/V for heavily sulfur doped silicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2012
- Accession Number
- ADA578214
Entities
People
- Anthony Difranzo
- Daniel Recht
- David Hutchinson
- Hannah Peterson
- James S. Williams
- Jessica Clark
- Michael J Aziz
- Nathaniel E. Berry
- Peter D. Persans
- Supakit Charnvanichborikarn
Organizations
- Rensselaer Polytechnic Institute