High-Density 3-D IC Integration Technology for Mixed-Signal Microsystems

Abstract

We present the results of the development of high-density 3-D interconnect technology that is applicable to the integration of heterogeneous integrated circuits. The technology relies on through-silicon vias, advanced thinning of silicon wafers, and copper/tin-copper solid-liquid diffusion bonding to produce vertical interconnects at a density of 1 x 10(exp 6)/sq cm. The processing approach allows for the integration of known-good-die in either die-to-die or die-to-wafer bonding configurations, providing the flexibility desirable for the implementation in mixed-signal microsystems.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2013
Accession Number
ADA578374

Entities

People

  • Dean Malta
  • Dorota S. Temple
  • Erik A. Vick
  • John M. Lannon
  • Matthew R. Lueck

Organizations

  • RTI International

Tags

DTIC Thesaurus Topics

  • Adhesives
  • Bonding
  • Chemical Vapor Deposition
  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Diffusion Bonding
  • Electronics
  • Fabrication
  • High Density
  • Integrated Circuits
  • Materials
  • Network Topology
  • Readout Integrated Circuits
  • Semiconductor Devices
  • Semiconductors
  • Test Vehicles
  • Three Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Mathematics or Statistics