AlInGaN Bandgap and Doping Engineering for Visible Laser
Abstract
There is a great need to develop chip-scale visible lasers for many applications, including laser sight, environmental monitoring, and compact pumping sources for ultra-short laser pulse generation, high luminous full color displays, new generation solid-state lighting, etc. The realization of chip-scale visible laser diodes (LDs) would provide significant benefits in terms of cost, volume, and the ability of photonic integration with other functional devices. Significant progress in nitride material technology has been achieved and high performance visible LEDs and near UV LDs based on InGaN are now commercially available. However, many technological challenges remain to be overcome in order to realize InGaN visible injection LDs. The two most outstanding issues are (i) high dislocation density which causes a premature device breakdown and (ii) low conductivity (or doping efficiency) of p-type GaN, which limits an efficient current injection. The objective of the proposed research is to develop improved growth and doping methods for achieving III-nitride materials with improved crystalline quality and conductivity and to aid in the development of III-nitride visible emitters operating at around 500 nm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 08, 2012
- Accession Number
- ADA578656
Entities
People
- Hongxing Jiang
- Jingyu Lin
Organizations
- Texas Tech University