High Al-content AlGaN Alloys for Deep UV Laser Applications

Abstract

The work explores the potential of AlN as an active material for deep UV optoelectronics device applications and to address doping issues in AlN and Al-rich AlGaN.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 08, 2012
Accession Number
ADA578665

Entities

People

  • Hongxing Jiang
  • Jingyu Lin

Organizations

  • Texas Tech University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Detectors
  • Energy Bands
  • Engineering
  • Heat Of Activation
  • Laser Applications
  • Lasers
  • Light Sources
  • Materials
  • Optical Properties
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Students
  • Ultraviolet Lasers

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics