Materials and Theory of Topological Insulators

Abstract

During the past three years, we have designed and constructed an easily modifiable mini-MBE system that is entirely dedicated to the study of novel materials thin film growth. Using this system, our group has demonstrated the high quality synthesis of three-dimensional topological insulator (TI) thin films the Bi2Te3 family. Bi2Te3 and Bi2Se3 have simple single Dirac cone surface band structures and relatively large bulk band gaps which make them particularly attractive for room temperature device operation. Despite the fact that bulk growth techniques for high quality single crystal Bi2Te3 and Bi2Se3 are well known, many modern device applications require thin films.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 2012
Accession Number
ADA579428

Entities

People

  • Jim Harris
  • Shoucheng Zhang

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electron Microscopy
  • Energy Bands
  • Engineering
  • Films
  • High Resolution
  • High Temperature
  • Materials
  • Measurement
  • Phase Transformations
  • Single Crystals
  • Students
  • Thin Films
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Manufacturing Engineering.
  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene