Self-Aligned-Gate GaN-HEMTs with Heavily-Doped n+-GaN Ohmic Contacts to 2DEG
Abstract
We report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron-gas (2DEG). High density-of-states of three-dimensional (3D) n+-GaN source near the gate mitigates "source-starvation," resulting in a dramatic increase in a maximum drain current (Idmax) and a transconductance (gm). 20-nm-gate D-mode HEMTs with a 40-nm gate-source (and gate-drain) distance exhibited a record-low Ron of 0.23 Ohmsmm, a record-high Idmax of >4 A/mm, and a broad gm curve of >1 S/mm over a wide range of Ids from 0.5 to 3.5 A/mm. Furthermore, 20-nm-gate E-mode HEMTs with an increased Lsw of 70 nm demonstrated a simultaneous fT/fmax of 342/518 GHz with an off-state breakdown voltage of 14V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2013
- Accession Number
- ADA579504
Entities
People
- A. Corrion
- A. Schmitz
- D. Regan
- David F. Brown
- G. Candia
- H. Fung
- Joel Wong
- K. Shinohara
- M. Micovic
- Seungchan Kim
- Yan Tang
Organizations
- HRL Laboratories