Light-Hole and Heavy-Hole Transitions for High-Temperature Long-Wavelength Infrared Detection

Abstract

Hole transitions from the heavy-hole hh to the light-hole lh band contributing to the 4-10 microns response range are reported on p-GaAs/AlGaAs detectors. The detectors show a spectral response up to 16.5 microns, operating up to a temperature of 330 K where the lh-hh response is superimposed on the free-carrier response. Two characteristic peaks observed between 5-7 microns are in good agreement with corresponding energy separations of the lh and hh bands and thus originated from lh-hh transitions. Results will be useful for designing multi-spectral detection which could be realized on a single p-GaAs structure.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA579956

Entities

People

  • A. G. Perera
  • H. C. Liu
  • K K Choi
  • M. Buchanan
  • P. K. Pitigala
  • P. Wijewarnasuriya
  • Y. F. Lao
  • Z. R. Wasilewski

Organizations

  • Georgia State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Band Structures
  • Copyrights
  • Detection
  • Detectors
  • Energy Bands
  • Fermi Levels
  • High Temperature
  • Infrared Detection
  • Infrared Detectors
  • Long Wavelengths
  • Materials
  • Short Wavelengths
  • Spin-Orbit Interaction
  • Valence Bands
  • Work Functions

Readers

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  • Semiconductor Device Technology