Stacked Quantum Wire AlN/GaN HEMTs

Abstract

AlN/GaN heterostructures offer the highest possible 2D electron gas concentration with reasonable mobility while the thinnest possible barrier in single heterostructure based HEMTs. As a result, they are very attractive for ultra-scaled high-speed GaN transistors (ft/fmax > 300 GHz). Indeed our group was the first to demonstrate promising results of AlN/GaN HEMTs: Idmax of 2.3 A/mm, gm,ext of 480 S/mm and gm,int of > 1 S/mm, and extrinsic ft/fmax of 52/60 GHz. [Zimmermann 2008 IEEE EDL] However, it has been challenging to harvest these properties due to ohmic contact formation, gate leakage and lack of effective back barriers. In this program we focused on the following tasks and achievements. The research findings have been partly documented in three Ph.D. dissertations [Yu Cao 2010, David Deen 2011 and Tian Fang 2012], 11 journal publications and 3 conference papers, which are listed below.

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Document Details

Document Type
Technical Report
Publication Date
Apr 27, 2012
Accession Number
ADA580523

Entities

People

  • Debdeep Jena
  • Huili Xing

Organizations

  • University of Notre Dame

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Engineering
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Power Electronics
  • Quantum Wells
  • Quantum Wires
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Quantum Computing