Metal-Insulator Transitions in Epitaxial LaVO(3) and LaTiO(3) Films

Abstract

We have demonstrated that epitaxial films of LaVO3 and LaTiO3 can exhibit metallicity though their bulk counterparts are Mott insulators. When LaTiO3 films are compressively strained on SrTiO3 substrates, we observe metallicity that is attributed largely to epitaxial strain-induced electronic structure modifications and secondarily to interface electronic reconstruction at the LaTiO3/SrTiO3 interface. However, when LaVO3 films are compressively strained on SrTiO3 substrates, the observed metallicity is primarily attributed to interface effects. Signatures of weak localization are observed at low temperature in LaVO3 films in the temperature, film thickness, as well as magnetic field dependence of the magnetoresistance.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2012
Accession Number
ADA580586

Entities

People

  • Chuanlin He
  • F. J. Wong
  • M. T. Gray
  • T. D. Sanders
  • V. V. Mehta
  • Y. Suzuki

Organizations

  • University of Iowa

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Advanced Materials
  • Dielectrics
  • Films
  • Ground State
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Materials Science
  • Measurement
  • Mott Insulators
  • Physical Properties
  • Quantum Properties
  • Scattering
  • Spin-Orbit Interaction
  • Subatomic Particles
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Military Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene