Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

Abstract

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

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Document Details

Document Type
Technical Report
Publication Date
Feb 02, 2005
Accession Number
ADA580700

Entities

People

  • Al. L. Efros
  • Allan S. Bracker
  • Andrew R. Shabaev
  • D. Gammon
  • D. Gershoni
  • Doewon Park
  • E. A. Stinaff
  • I. A. Merkulov
  • J. G. Tischler
  • Morgan E Ware
  • V. L. Korenev

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Charge Carriers
  • Electron Holes
  • Electronics Laboratories
  • Excitons
  • Ground State
  • Heterojunctions
  • Magnetic Fields
  • Nuclear Spins
  • Optical Pumping
  • Polarization
  • Pumping
  • Quantum Dots
  • Quantum Information
  • Quantum Properties
  • Quantum Wells
  • Semiconductors
  • Spin-Orbit Interaction

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots