Structural and luminescent Properties of Bulk InAsSb

Abstract

The strong bandgap bowing in the InAsxSb1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1-x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAsxSb1-x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 mu m.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 21, 2011
Accession Number
ADA580962

Entities

People

  • D. Donetsky
  • Dafu Wang
  • G. Belenky
  • G. Kipshidze
  • H. Hier
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Bulk Materials
  • Crystal Lattices
  • Detectors
  • Dislocations
  • High Resolution
  • Laser Diodes
  • Long Wavelengths
  • Long-Wavelength Infrared Radiation
  • Materials
  • Military Research
  • Photoluminescence
  • Residuals
  • Semiconductors
  • Substrates
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology