Properties of Unrelaxed InAs1-XSbX Alloys Grown on Compositionally Graded Buffers

Abstract

Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1-xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 mu m at 150 K. The minority carrier lifetime measured at 77K for InAs0.8Sb0.2 was tau = 250 ns.

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Document Details

Document Type
Technical Report
Publication Date
Oct 07, 2011
Accession Number
ADA580966

Entities

People

  • D. Donetsky
  • Dafu Wang
  • G. Belenky
  • G. Kipshidze
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Band Gaps
  • Crystal Lattices
  • Electron Microscopy
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Physics
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Surface Roughness
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology