Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates
Abstract
This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f t) of approx. 165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of approx. 105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V -on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 29, 2012
- Accession Number
- ADA581489
Entities
People
- Ali Javey
- Ali M. Niknejad
- Chuan Wang
- E. Plis
- Hui Fang
- Jun-chau Chien
- Junghyo Nah
- Kuniharu Takei
- Sanjay Krishna
Organizations
- University of California, Berkeley