Trap Characterization in High Field, High Temperature Stressed Gallium Nitride High Electron Mobility Transistors

Abstract

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) offer higher power output over existing technology. However, issues such as current collapse and kink effect hinder GaN HEMTs performance. The degraded performance is linked to traps within the device. Capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed on commercially available GaN-on-Si to characterize traps before and after high field, high temperature stressed conditions. The results revealed the devices had less gate current leakage after stressing and the C-V characteristics changed dramatically after a 24 hour recovery period.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2013
Accession Number
ADA581736

Entities

People

  • Kevin B. Pham

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Charge Carriers
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Military Research
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics