Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb

Abstract

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of greater than 412 ns at 77K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga1-xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 22, 2011
Accession Number
ADA581737

Entities

People

  • A. W. Liu
  • B. C. Connelly
  • D. Lubyshev
  • Elizabeth H. Steenbergen
  • G. D. Metcalfe
  • Haoting Shen
  • J. M. Fastenau
  • M. Wraback
  • O. O. Cellek
  • S. Elhamri
  • Y. Qiu
  • Y.-h. Zhang

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Bulk Materials
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Excitation
  • Fermi Levels
  • Long Wavelengths
  • Materials
  • Military Research
  • Photodetectors
  • Physics
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Universities
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design