MWIR Lasers Using Type II Quantum Well Active Regions on InP Substrates

Abstract

For this STTR program, we developed modeling for a Type II Quantum Well(QW)-based 2.4-4 microns laser grown on InP substrates that use a unique quantum well design and demonstrated concept feasibility through experimental photoluminescence measurements. The QW design is based on using InGaAs and GaAsSb heterostructures with Type II electronic transitions. This technology enables the potential to manufacture lasers in a broad spectrum, from 2.4-4 microns using Princeton Lightwave Inc s established laser production platform. Our novel quantum well design enhances electron and hole wave-function overlapping, reaching the highest possible material gain. During Phase I of the program, we developed detailed modeling of Type II QW electronic transitions describing optical and gain characteristics using InGaAs and GaAsSb composition layers and demonstrated the concept feasibility through photoluminescence measurements.

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Document Details

Document Type
Technical Report
Publication Date
Mar 30, 2012
Accession Number
ADA582802

Entities

People

  • Igor Kudryashov

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Contracts
  • Diffraction
  • Electrons
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Heterojunctions
  • High Gain
  • Materials
  • Optical Properties
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Substrates
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing