Sensitive Mid-Infrared Detection in Wide-Bandgap Semiconductors Using Extreme Non-Degenerate Two-Photon Absorption

Abstract

Identifying strong and fast nonlinearities for today s photonic applications is an ongoing effort1. Materials2 5 and devices6 9 are typically sought to achieve increasing nonlinear interactions. We report large enhancement of two-photon absorption through intrinsic resonances using extremely non-degenerate photon pairs. We experimentally demonstrate two-photon absorption enhancements by factors of 100 1,000 over degenerate two-photon absorption in direct-bandgap semiconductors. This enables gated detection of sub-bandgap and sub-100 pJ mid-infrared radiation using large-bandgap detectors at room temperature. Detection characteristics are comparable in performance to liquid-nitrogen-cooled HgCdTe (MCT) detectors. The temporal resolution of this gated detection by two-photon absorption is determined by the gating pulse duration.

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Document Details

Document Type
Technical Report
Publication Date
Aug 07, 2011
Accession Number
ADA584208

Entities

People

  • Claudiu M. Cirloganu
  • David J Hagan
  • Dmitry A. Fishman
  • Eric W. Van Stryland
  • Lazaro A Padilha
  • Morgan Monroe
  • Scott Webster

Organizations

  • University of Central Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Detection
  • Detectors
  • Frequency
  • Frequency Combs
  • Infrared Detection
  • Infrared Radiation
  • Intermediate Infrared Radiation
  • Lasers
  • Materials
  • Optical Properties
  • Optics
  • Repetition Rate
  • Semiconductors
  • Two Photon Absorption
  • Ultraviolet Detection
  • Wide Bandgap Semiconductors

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics