High Precision Dynamic Alignment and Gap Control for Optical Near-Field Nanolithography
Abstract
The authors demonstrate the use of interferometric-spatial-phase-imaging (ISPI) to control a gap distance of the order of nanometers for parallel optical near-field nanolithography. In optical near-field nanolithography, the distance between the optical mask and the substrate needs to be controlled within tens of nanometers or less. The ISPI technique creates interference fringes from checkerboard gratings fabricated on the optical mask, which are used to determine the gap distance between the mask and the substrate surfaces. The sensitive of this gapping technique can reach 0.15 nm. With the use of ISPI and a dynamic feedback control system, the authors can precisely align the mask and the substrate and keep variation of the gap distance below 6 nm to realize parallel nanolithography.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2013
- Accession Number
- ADA584224
Entities
People
- Euclid E. Moon
- Luis M. Traverso
- Pornsak Srisingsitthisunti
- Xianfan Xu
- Xiaolei Wen
Organizations
- Purdue University