Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2

Abstract

Although solid-state switches can be actuated several orders of magnitude faster than electromechanical ones, most solid-state circuit breakers require some form of sensing, filtering, triggering, latching, and reset capability for control. These functions can contribute to undesirable delays that limit performance. Modifications were made to the design of a small-scale 600-V, 5-A silicon carbide (SiC) junction field-effect transistor (JFET) based bidirectional solid-state circuit breaker (BDSSCB) to reduce self-trigging and reset response times, and increase rated current to 10 A. Additional current rating increases are possible, while maintaining the small-scale BDSSCB footprint area of 32.2 cm2 (5.0 in2), using custom power stage designs. Experimental results are presented for both BDSSCBs evaluated in a pulsed current test circuit.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2013
Accession Number
ADA584403

Entities

People

  • D. Urciuoli

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Carbides
  • Circuit Breakers
  • Compound Semiconductors
  • Elements
  • Field Effect Transistors
  • Inductors
  • Military Research
  • Ratings
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Test And Evaluation
  • Transistors
  • Trigger Points

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems