Contactless Microwave Measurements of Photoconductivity in Silicon Hyperdoped with Chalcogens
Abstract
Photoconductivity in silicon hyperdoped with sulfur and selenium above the insulator-to-metal transition was measured via photoinduced changes in the microwave reflectivity of hyperdoped layers formed on p-type silicon. Despite these materials' strong subgap optical absorption, exposing them to 1310 and 1550nm light results in a change in conductivity per photon 10,000 times smaller than what is observed in untreated silicon exposed to 980nm light. A similar bound applies for 405nm light, which is absorbed entirely in the hyperdoped layer. We use these results to deduce that the photocarrier lifetime in the hyperdoped material is < or = 100 ns.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2012
- Accession Number
- ADA585063
Entities
People
- Andrew Mcallister
- Anthony Difranzo
- Aurore J. Said
- Daniel Recht
- David Hutchinson
- Jeffrey M. Warrender
- Michael J Aziz
- Peter D. Persans
- Thomas Cruson
Organizations
- Rensselaer Polytechnic Institute