Challenges Facing ZnO and GaN: Facts and Myths. Held in Glen Allen, Virginia on 18-19 October 2007
Abstract
A meeting attended by selected experts October 18-20 2007 at Virginia Crossing, Resort 1000 Virginia Center Pkwy just outside of Richmond VA to openly discuss Challenges facing ZnO and GaN: Facts and Myths. The scene setting presentations were followed by shorter presentations with open flow of information and questions. Among the topics discussed were bulk GaN and ZnO, defects, p-type doping, particularly for ZnO, promising heterostructures and devices based on ZnO, ferromagnetism in GaN and ZnO, doping of high mole fraction AlGaN and InGaN, particularly p-type, light extraction and efficiency in GaN based LEDs, degradation mechanisms in GaN based lasers, degradation mechanisms in GaN based HFETs and potential measures to enhance lifetime and performance, negative differential resistance in GaN based heterostructures, and intersubband transitions. This report provides an incisive treatise of these topics with attention being paid to problem areas, possible solutions and what can be expected.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2007
- Accession Number
- ADA585374
Entities
People
- Hadis H. Morkoç̌
Organizations
- Virginia Commonwealth University