Low-Cost Lattice Matching Zn(Se)Te/Si Composite Substrates for HgCdSe and Type-2 Superlattices

Abstract

Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 , such as HgCdSe and GaSb-based type-II strained-layer superlattices. In this report, we present our findings on the systematic studies of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Optimal MBE growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect, and etch pits densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained 3-in ZnTe(211)/Si and ZnTe(100)/Si wafers with X-ray full-width at half-maximum (FWHM) as low as 70 and 103 arcsec, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2013
Accession Number
ADA586100

Entities

People

  • Yuanping Chen

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Composite Materials
  • Compound Semiconductors
  • Crystal Lattices
  • Detectors
  • Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • Heat Energy
  • Hydroxides
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Substrates
  • Superlattices
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics