1.55 micro m In(Ga)N Nanowire Lasers on Silicon
Abstract
The development of Si photonics and the implementation of inter- and intra-chip optical interconnects has been severely hampered by the lack of a suitable light source on Si. In this project, we propose to develop In(Ga)N nanowire lasers on a Si-platform, with emission in the spectral range of 1.55 um, for chip-level optical communication applications. Nearly dislocation-free In(Ga)N nanowire heterostructures are formed directly on Si substrates with the use of an in situ deposited In seeding layer as a catalyst. We have recently achieved, for the first time, nearly intrinsic and Si-doped InN nanowires as well as nanowire LEDs with the highest internal quantum efficiency ever reported. In this project, we will first investigate the design and selective area growth of InGaN core-shell nanowire laser heterostructures. Both optically pumped and electrically single InGaN nanowire lasers on Si will be fabricated and characterized, with the objective to achieve an ultralow threshold (< 100 uA) and relatively high output power (>100 W).
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2012
- Accession Number
- ADA587147
Entities
People
- Zetian Mi
Organizations
- McGill University