Memristive Materials and Devices
Abstract
CMU proved that the filaments in switching devices do not require any pre-existing inhomogeneities such as dislocations to develop. Instead, the conductive paths form due to intrinsic electronic transport instabilities in oxides. The transfer of electrons present as small polarons in oxides to the high mobility band states has been postulated as the origin of this effect. CMU performed in situ and ex situ electron microscopy analysis of oxide-based memristors and demonstrated that devices can switch without formation of any extended defects including oxygen-deficient secondary phases.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 19, 2013
- Accession Number
- ADA589247
Entities
People
- James A. Bain
- Marek Skowronski
- Paul A. Salvador
Organizations
- Carnegie Mellon University