Monolithic Microwave Integrated Circuit (MMIC) Frequency Doublers - 2nd Pass Correction

Abstract

Frequency multiplier microwave monolithic integrated circuits (MMICs) can be used for a variety of radio frequency (RF) and microwave systems. Several frequency doublers were designed using a 0.13-m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The original design and fabrication of these circuits was performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. As noted in the previous technical note, ARL-TN-0517, Monolithic Microwave Integrated Circuit (MMIC) Frequency Doublers, the measured results for the open circuit stub to attenuate the fundamental harmonic indicated that an electromagnetic (EM) simulator, such as Sonnet EM, more accurately modeled the performance compared to a standard microwave linear simulator. The length of the stub attenuators were corrected and refabricated as part of the fall 2012 JHU MMIC Design Course. The measurements of the second pass 8- and 16-GHz frequency doublers with harmonic stubs are documented in this follow up technical note.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2013
Accession Number
ADA589660

Entities

People

  • John E. Penn

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Attenuators
  • Circuits
  • Electron Mobility
  • Electrons
  • Frequency
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Measurement
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Levels
  • Semiconductors
  • Simulations
  • Simulators

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.
  • Military History

Technology Areas

  • Microelectronics