Low-Pressure Chemical Vapor (LPCVD) Graphene Growth Study and Raman Characterization
Abstract
Graphene is a monolayer material comprised of sp2 bonded carbon atoms that form a honeycomb-like lattice structure. Because it is only one atom thick, it is the prototypical two-dimensional material and, as such, exhibits unique physical properties, including a high intrinsic mobility (200,000 cm2/Vs) (1) and a constant optical absorption of 2.3% per layer over a wide spectral range (2). Graphene was first isolated physically by the mechanical exfoliation method (3); however, recent efforts have focused on graphene synthesis by conventional methods, such as chemical vapor deposition (CVD) and ultrahigh vacuum, high temperature annealing (i.e., epitaxial graphene from SiC) (4, 5). CVD, in particular, is a promising growth technique because of the ability to deposit large areas of graphene on inexpensive, transition metal materials (e.g., nickel and copper).
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2013
- Accession Number
- ADA590053
Entities
People
- Barbara M. Nichols
Organizations
- United States Army Research Laboratory