Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned (211)Si

Abstract

Low-defect density epitaxial CdTe on Si is very crucial for fabricating high performance HgCdTe IR focal planar arrays on Si. This paper discusses a novel nanopatterning technique to explore defect reduction in CdTe epitaxy on (211)Si. Nanopatterning of full 3" (211)Si wafers was done by growing a thin layer of thermal SiO2 and patterning by molecular transfer lithography (MxL) based on water-soluble templates. Conditions for obtaining selective Ge

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Document Details

Document Type
Technical Report
Publication Date
May 15, 2012
Accession Number
ADA590790

Entities

People

  • Charles Schaper
  • Fred Semendy
  • Ishwara Bhat
  • Priyalal Wijewarnasuriya
  • Shashidhar Shintri
  • Sudhir Trivedi
  • Sunil G. Rao
  • W. Pałosz

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Crystals
  • Dry Etching
  • Electron Microscopes
  • Electron Microscopy
  • Engineering
  • Epitaxial Growth
  • Etching
  • Microscopes
  • Microscopy
  • Military Research
  • Phase
  • Solid State Physics
  • Surface Roughness
  • Transmission Electron Microscopy
  • Vapor Phases
  • X Rays
  • X-Ray Detectors

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology