Blanket and Patterned Growth of CdTe on (211)Si Substrates by Metal-Organic Vapor Phase Epitaxy

Abstract

Metalorganic vapor phase epitaxy (MOVPE) of (211)B CdTe on (211)Si using intermediate Ge and ZnTe layers has been achieved for use as substrates for the growth of HgCdTe infrared detector materials. The best (211)B CdTe films grown in this study display a low X-ray diffraction (XRD) rocking-curve full-width-at-half maximum (FWHM) of 64 arcs for a 12 m thick layer and Everson etch pit density (EPD) of 3x10(expn 5) cm(expn -2). In order to reduce the threading dislocation density further, growth on patterned layer has been investigated using Si3N4 as the mask. In order to achieve selective nucleation on patterned layer, process parameters were first developed. A circular pattern was used to study the anisotropy during growth and to identify the optimum orientation for parallel stripe growth windows. The optimum growth window was then used for the growth of completely merged layers.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 2012
Accession Number
ADA590792

Entities

People

  • Ishwara B. Bhat
  • Randolph N. Jacobs
  • Shashidhar Shintri
  • Sunil R. Rao

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Detectors
  • Dislocations
  • Electron Microscopes
  • Engineering
  • Epitaxial Growth
  • Films
  • High Temperature
  • Materials
  • Scanning Electron Microscopes
  • Solid State Physics
  • Systems Engineering
  • Vapor Deposition
  • Vapor Phases
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology