Growth of GaN- and ZnO-Based Nanorod Compound Structures

Abstract

The cross-sectional sizes of the regularly-patterned GaN nanorods (NRs) and InGaN/GaN quantum-well (QW) NRs of different heights and different hexagon orientations, which are grown on the patterned templates of different hole diameters, pitches, and crystal orientations, are compared. It is found that the cross-sectional size of the GaN NR, which is formed with the pulsed growth mode, is mainly controlled by the patterned hole diameter, and the thickness of the sidewall QW structure is mainly determined by the NR height. The cross-sectional size variation of GaN NR is interpreted by the quasi-three-dimensional nature of atom supply amount for precipitating a two-dimensional disk-shaped NR segment. The variation of the sidewall QW structure is explained by the condition of constituent atom supply in the gap volume between the neighboring NRs.

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 2013
Accession Number
ADA590871

Entities

People

  • Chih-Chung Yang

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystals
  • Diameters
  • Electron Microscopes
  • Electron Microscopy
  • Geometry
  • Materials Processing
  • Microscopes
  • Microscopy
  • Nanotechnology
  • Optical Properties
  • Optics
  • Quantum Wells
  • Template Patterns
  • Thickness
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Fluid Mechanics and Fluid Dynamics.
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing