Electrical Performance of Monolayer MoS2 Field-Effect Transistors Prepared by Chemical Vapor Deposition

Abstract

Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm(expn 2)/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm(expn 2)/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10(expn 5) to 10(expn 9).

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Document Details

Document Type
Technical Report
Publication Date
May 16, 2013
Accession Number
ADA590987

Entities

People

  • A. Glen Birdwell
  • Jun Lou
  • Madan Dubey
  • Matin Amani
  • Matthew L. Chin
  • Pulickel Ajayan
  • Sina Najmaei
  • Terrance P. O'regan
  • Zheng Liu

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electrical Engineering
  • Electrical Properties
  • Electron Beam Lithography
  • Electron Microscopy
  • Field Effect Transistors
  • High Resolution
  • Materials
  • Materials Processing
  • Materials Science
  • Physical Properties
  • Scanning Electron Microscopy
  • Scattering
  • Semiconductors
  • Two Dimensional
  • Two-Dimensional Materials
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Surface Coatings Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene