Low Resistance, Unannealed ohmic Contacts to n-Type InAs0.66Sb0.34

Abstract

Unannealed Ti/Pt/Au contacts to n-type InAs(0.66)Sb(0.34) were fabricated and measured. Extremely low specific contact resistances down to 2.4 x 10(-8) Omega cm(2) were measured, commensurate with In(0.53)Ga(0.47)As, InAs, and In(0.27)Ga(0.73)Sb contact schemes with higher doping, which is due to the very high electron mobility in InAs(0.66)Sb(0.34) and hypothesised pinning of the surface Fermi level within the conduction band.

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Document Details

Document Type
Technical Report
Publication Date
Nov 08, 2007
Accession Number
ADA591231

Entities

People

  • J. G. Champlain
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Hall Effect
  • Heterojunction Bipolar Transistors
  • Integrated Circuits
  • Materials
  • Metal-Semiconductor Junctions
  • Microwave Integrated Circuits
  • Mobility
  • Monolithic Microwave Integrated Circuits
  • Photolithography
  • Power Electronics
  • Resistance
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics