Strain-Balanced InAs/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy on GaSb Substrates

Abstract

Strain-balanced InAs/InAs(sub 1-x)Sb(sub x) type-II superlattices (SLs) on GaSb substrates with 0.27 </= x </= 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 micro m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 micro m) and to within 9meV for a mid-wavelength infrared sample (5.9 micro m). X-ray diffraction measurements reveal average SL mismatches of less than 0.2%, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

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Document Details

Document Type
Technical Report
Publication Date
Dec 21, 2011
Accession Number
ADA591343

Entities

People

  • Bruno Ullrich
  • David J Smith
  • Diana L. Huffaker
  • Elizabeth H. Steenbergen
  • Kalyan Nunna
  • Lu Ouyang
  • Yong-hang Zhang

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Energy Bands
  • Epitaxial Growth
  • High Resolution
  • Materials
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Materials
  • Simulations
  • Wave Functions
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology