Low Resistance, Unannealed, Ohmic Contacts to p-type In0.27Ga0.73Sb

Abstract

Unannealed Pd/Pt/Au contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed Pd/Pt/Au contacts were found to be Ohmic in nature; and for a hole density of 2.9 x 10(to the 19th power) cm-3 and a mobility of 160 cm2 /V s, a specific contact resistance of 7.6 x 10(to the -8 power) Ohms cm2 was measured.

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Document Details

Document Type
Technical Report
Publication Date
Sep 25, 2006
Accession Number
ADA591464

Entities

People

  • James G. Champlain
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Gaps
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Equations
  • Hall Effect
  • High Electron Mobility Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Mobility
  • Photolithography
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Transmission Lines

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.