Efficient Incorporation of Mg in Solution Grown GaN Crystals
Abstract
Detailed spectrometry and optical spectroscopy studies carried out on GaN crystals grown in solution detect and identify Mg as the dominant shallow acceptor. Selective etching of crystals with higher Mg levels than that of the donor concentration background indicates that Mg acceptors incorporate preferentially in the N-polar face. Electrical transport measurements verified an efficient incorporation and activation of the Mg acceptors. These results suggest that this growth method has the potential to produce p-type doped epitaxial layers or p-type substrates characterized by high hole concentration and low defect density.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 11, 2013
- Accession Number
- ADA591544
Entities
People
- Boris N Feigelson
- Jaime A. Freitas Jr.
- Travis J. Anderson
Organizations
- United States Naval Research Laboratory