Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors

Abstract

Quantum wells of InGaAs clad by InAlAs were grown on AlGaAsSb buffer layers by molecular beam epitaxy. The buffer layer lattice parameters were near 6.0 , yielding tensile strains up to 2% in the InGaAs and InAlAs. Room-temperature electron mobilities of 9000-11,000 cm2/V s were achieved. Field-effect transistors (FETs) were fabricated and exhibited good DC and RF characteristics. Previous work demonstrated compressively-strained GaSb quantum wells on similar buffer layers with high hole mobilities and good transistor performance. Hence, a single buffer layer of AlGaAsSb should be suitable for complementary circuits comprised of n-channel FETs based on the mature InGaAs/InAlAs technology and p-channel FETs based on high-mobility antimonides.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2014
Accession Number
ADA591545

Entities

People

  • Adrian Podpirka
  • Brian R. Bennett
  • James G. Champlain
  • Ronaldd D. Schrimpf
  • Theresa F. Chick

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Complementary Metal-Oxide Semiconductors
  • Conduction Bands
  • Crystal Growth
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Mobility
  • Molecular Beam Epitaxy
  • Monolithic Microwave Integrated Circuits
  • Quantum Wells
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing