Effect of Interface States on the Performance of Antimonide nMOSFETs
Abstract
Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high- dielectric (1-nm Al2O3/10-nm HfO2). The effect of interface trap density Dit on the dc drive current and transconductance gm is studied in detail using split C-V/G-V , pulsed I-V , and radio-frequency measurements. Pulsed I-V measurements show improved ON current, transconductance, and subthreshold slope due to reduced charge trapping in the dielectric at high frequencies. The long-channel Sb nMOSFET exhibits effective electron mobility of 6000 cm2/V s at high field (2 x 10[expn 12]/cm[expn 2] of charge density N[sub s]), which is 15 x higher than Si NMOS inversion layer mobility, and one of the highest values reported for III-V MOSFETs. The short-channel Sb nMOSFET (L[sub G] = 150 nm) exhibits a cutoff frequency fr of 120 GHz, an fr L(sub G) product of 18 GHz . micro m, and a source-side injection velocity v( sub eff) of 2.7 x 10(expn 7) cm/s at a drain bias VDS of 0.75 V and a gate overdrive of 0.6 V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 2013
- Accession Number
- ADA591753
Entities
People
- Ashkar Ali
- Brian R. Bennett
- Himanshu Madan
- Michael Barth
- Ronaldd D. Schrimpf
- Suman Datta
Organizations
- United States Naval Research Laboratory